spintronics.bib

@article{PhysRevB.80.214427,
  abstract = {Spin transport experiments in graphene, a single layer of carbon atoms ordered in a honeycomb lattice, indicate spin-relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin-relaxation times are due to extrinsic factors, such as spin relaxation caused by low impedance contacts, enhanced spin-flip processes at the device edges, or the presence of an aluminum oxide layer on top of graphene in some samples. Lateral spin valve devices using a field-effect transistor geometry allowed for the investigation of the spin relaxation as a function of the charge density, going continuously from metallic hole to electron conduction (charge densities of n∼1012 cm−2) via the Dirac charge neutrality point (n∼0). The results are quantitatively described by a one-dimensional spin-diffusion model where the spin relaxation via the contacts is taken into account. Spin valve experiments for various injector-detector separations and spin precession experiments reveal that the longitudinal (T1) and the transversal (T2) relaxation times are similar. The anisotropy of the spin-relaxation times τ∥ and τ⊥, when the spins are injected parallel or perpendicular to the graphene plane, indicates that the effective spin-orbit fields do not lie exclusively in the two-dimensional graphene plane. Furthermore, the proportionality between the spin-relaxation time and the momentum-relaxation time indicates that the spin-relaxation mechanism is of the Elliott-Yafet type. For carrier mobilities of 2×103--5×103 cm2/V s and for graphene flakes of 0.1--2 μm in width, we found spin-relaxation times on the order of 50--200 ps, times which appear not to be determined by the extrinsic factors mentioned above.},
  author = {M. Popinciuc and C. Józsa and P. J. Zomer and N. Tombros and A. Veligura and H. T. Jonkman and B. J. van Wees},
  doi = {10.1103/PhysRevB.80.214427},
  issue = {21},
  journal = {Phys. Rev. B},
  month = dec,
  numpages = {13},
  pacs = {72.25.-b},
  pages = {214427},
  publisher = {American Physical Society},
  title = {{Electronic spin transport in graphene field-effect transistors}},
  url = {http://link.aps.org/doi/10.1103/PhysRevB.80.214427},
  volume = {80},
  year = {2009}
}

@article{ActaPhysicaSlovaca.57.4_5.565-907,
  abstract = {Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is yet to demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin injection, Silsbee-Johnson spin-charge coupling, and spindependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor materials, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief reviews of relevant recent achievements in the field.},
  author = {Jaroslav Fabian and Alex Matos-Abiague and Christian Ertler and Peter Stano and Igor \v{Z}uti\'{c}},
  journal = {Acta Physica Slovaca},
  keywords = {Spintronics; Magnetic semiconductors; Spin injection; Spin relaxation; Spin transistor; Spin-orbit coupling},
  month = aug # "/" # oct,
  number = {4\&5},
  pacs = {72.25.-b, 72.25.Rb, 75.50.Pp, 85.75.-d},
  pages = {565--907},
  title = {{Semiconductor Spintronics}},
  url = {http://www.physics.sk/aps/pub.php?y=2007&pub=aps-07-04},
  volume = {57},
  year = {2007}
}

@article{PhysRevB.37.5312,
  author = {Mark Johnson and R. H. Silsbee},
  doi = {10.1103/PhysRevB.37.5312},
  issue = {10},
  journal = {Phys. Rev. B},
  month = apr,
  pages = {5312--5325},
  publisher = {American Physical Society},
  title = {{Coupling of electronic charge and spin at a ferromagnetic-paramagnetic metal interface}},
  url = {http://link.aps.org/doi/10.1103/PhysRevB.37.5312},
  volume = {37},
  year = {1988}
}

@article{PhysRevB.86.235408,
  abstract = {In the field of spintronics the ``conductivity mismatch'' problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact-induced spin relaxation on spin transport, in particular on nonlocal Hanle precession measurements. As the Hanle line shape is modified by the contact-induced effects, the fits to Hanle curves can result in incorrectly determined spin transport properties of the transport channel. We quantify this effect that mimics a decrease of the spin relaxation time of the channel reaching more than four orders of magnitude and a minor increase of the diffusion coefficient by less than a factor of two. Then we compare the results to spin transport measurements on graphene from the literature. We further point out guidelines for a Hanle precession fitting procedure that allows the reliable extraction of spin transport properties from measurements.},
  author = {T. Maassen and I. J. Vera-Marun and M. H. D. Guimarães and B. J. van Wees},
  doi = {10.1103/PhysRevB.86.235408},
  issue = {23},
  journal = {Phys. Rev. B},
  month = dec,
  numpages = {8},
  pages = {235408},
  publisher = {American Physical Society},
  title = {{Contact-induced spin relaxation in Hanle spin precession measurements}},
  url = {http://link.aps.org/doi/10.1103/PhysRevB.86.235408},
  volume = {86},
  year = {2012}
}

@article{1210.0093v1,
  abstract = {In the field of spintronics the "conductivity mismatch" problem remains an important issue. Here the difference between the resistance of ferromagnetic electrodes and a (high resistive) transport channel causes injected spins to be backscattered into the leads and to lose their spin information. We study the effect of the resulting contact induced spin relaxation on spin transport, in particular on non-local Hanle precession measurements. As the Hanle line shape is modified by the contact induced effects, the fits to Hanle curves can result in incorrectly determined spin transport properties of the transport channel. We quantify this effect that mimics a decrease of the spin relaxation time of the channel reaching more than 4 orders of magnitude and a minor increase of the diffusion coefficient by less than a factor of 2. Then we compare the results to spin transport measurements on graphene from the literature. We further point out guidelines for a Hanle precession fitting procedure that allows to reliably extract spin transport properties from measurements.},
  archiveprefix = {arXiv},
  author = {T. Maassen and I. J. Vera-Marun and M. H. D. Guimarães and B. J. van Wees},
  comment = {published = 2012-09-29T10:46:25Z, updated = 2012-09-29T10:46:25Z, 9 pages, 7 figures},
  doi = {10.1103/PhysRevB.86.235408},
  eprint = {1210.0093v1},
  journal = {Phys. Rev. B 86, 235408 (2012)},
  month = sep,
  primaryclass = {cond-mat.mes-hall},
  title = {{Contact induced spin relaxation in Hanle spin precession measurements}},
  url = {https://arxiv.org/abs/1210.0093v1; https://arxiv.org/pdf/1210.0093v1},
  x-fetchedfrom = {arXiv.org},
  year = {2012}
}

@article{PhysRevB.67.052409,
  author = {S. Takahashi and S. Maekawa},
  doi = {10.1103/PhysRevB.67.052409},
  issue = {5},
  journal = {Phys. Rev. B},
  month = feb,
  numpages = {4},
  pages = {052409},
  publisher = {American Physical Society},
  title = {{Spin injection and detection in magnetic nanostructures}},
  url = {http://link.aps.org/doi/10.1103/PhysRevB.67.052409},
  volume = {67},
  year = {2003}
}

@article{Han2012369,
  author = {Wei Han and K.M. McCreary and K. Pi and W.H. Wang and Yan Li and H. Wen and J.R. Chen and R.K. Kawakami},
  doi = {10.1016/j.jmmm.2011.08.001},
  issn = {0304-8853},
  journal = {Journal of Magnetism and Magnetic Materials},
  keywords = {Graphene; Spintronics; Spin injection; Spin relaxation; Spin transport},
  number = {4},
  pages = {369--381},
  title = {{Spin transport and relaxation in graphene}},
  url = {http://www.sciencedirect.com/science/article/pii/S0304885311005373},
  volume = {324},
  year = {2012}
}

@article{PhysRevLett.105.167202,
  author = {Wei Han and K. Pi and K. M. McCreary and Yan Li and Jared J. I. Wong and A. G. Swartz and R. K. Kawakami},
  doi = {10.1103/PhysRevLett.105.167202},
  issue = {16},
  journal = {Phys. Rev. Lett.},
  month = oct,
  numpages = {4},
  pages = {167202},
  publisher = {American Physical Society},
  title = {{Tunneling Spin Injection into Single Layer Graphene}},
  url = {http://link.aps.org/doi/10.1103/PhysRevLett.105.167202},
  volume = {105},
  year = {2010}
}

@article{Wolf16112001,
  author = {Wolf, S. A. and Awschalom, D. D. and Buhrman, R. A. and Daughton, J. M. and von Molnár, S. and Roukes, M. L. and Chtchelkanova, A. Y. and Treger, D. M.},
  title = {Spintronics: A Spin-Based Electronics Vision for the Future},
  volume = {294},
  number = {5546},
  pages = {1488-1495},
  year = {2001},
  doi = {10.1126/science.1065389},
  abstract = {This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.},
  URL = {http://www.sciencemag.org/content/294/5546/1488.abstract},
  journal = {Science}
}

@article{RevModPhys.76.323,
  title = {Spintronics: Fundamentals and applications},
  author = {Žutić, Igor and Fabian, Jaroslav and Das Sarma, S.},
  journal = {Rev. Mod. Phys.},
  volume = {76},
  issue = {2},
  pages = {323--410},
  numpages = {0},
  year = {2004},
  month = apr,
  publisher = {American Physical Society},
  doi = {10.1103/RevModPhys.76.323},
  url = {http://link.aps.org/doi/10.1103/RevModPhys.76.323}
}

@article{1990ApPhL..56..665D,
  author = {{Datta}, S. and {Das}, B.},
  title = {Electronic analog of the electro-optic modulator},
  journal = {Applied Physics Letters},
  year = {1990},
  month = feb,
  volume = {56},
  pages = {665-667},
  doi = {10.1063/1.102730},
  url = {http://scitation.aip.org/content/aip/journal/apl/56/7/10.1063/1.102730}
}

@article{Jedema2001,
  author = {Jedema, F. J. and Filip, A. T. and van Wees, B. J.},
  title = {Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve},
  journal = {Nature},
  year = {2001},
  month = mar,
  day = {15},
  volume = {410},
  number = {6826},
  pages = {345--348},
  issn = {0028-0836},
  doi = {10.1038/35066533},
  url = {http://dx.doi.org/10.1038/35066533}
}

@article{PhysRevLett.55.1790,
  title = {Interfacial charge-spin coupling: Injection and detection of spin magnetization in metals},
  author = {Johnson, Mark and Silsbee, R. H.},
  journal = {Phys. Rev. Lett.},
  volume = {55},
  issue = {17},
  pages = {1790--1793},
  numpages = {0},
  year = {1985},
  month = oct,
  publisher = {American Physical Society},
  doi = {10.1103/PhysRevLett.55.1790},
  url = {http://link.aps.org/doi/10.1103/PhysRevLett.55.1790}
}

@article{Yang2008,
  author = {Yang, Tao and Kimura, Takashi and Otani, Yoshichika},
  title = {Giant spin-accumulation signal and pure spin-current-induced reversible magnetization switching},
  journal = {Nat Phys},
  year = {2008},
  month = nov,
  publisher = {Nature Publishing Group},
  volume = {4},
  number = {11},
  pages = {851--854},
  issn = {1745-2473},
  doi = {10.1038/nphys1095},
  url = {http://dx.doi.org/10.1038/nphys1095}
}

@article{PhysRevLett.94.196601,
  title = {Spin Polarized Tunneling at Finite Bias},
  author = {Valenzuela, S. O. and Monsma, D. J. and Marcus, C. M. and Narayanamurti, V. and Tinkham, M.},
  journal = {Phys. Rev. Lett.},
  volume = {94},
  issue = {19},
  pages = {196601},
  numpages = {4},
  year = {2005},
  month = may,
  publisher = {American Physical Society},
  doi = {10.1103/PhysRevLett.94.196601},
  url = {http://link.aps.org/doi/10.1103/PhysRevLett.94.196601}
}

@article{Novoselov22102004,
  author = {Novoselov, K. S. and Geim, A. K. and Morozov, S. V. and Jiang, D. and Zhang, Y. and Dubonos, S. V. and Grigorieva, I. V. and Firsov, A. A.},
  title = {Electric Field Effect in Atomically Thin Carbon Films},
  volume = {306},
  number = {5696},
  pages = {666-669},
  year = {2004},
  doi = {10.1126/science.1102896},
  abstract = {We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 1013 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.},
  url = {http://www.sciencemag.org/content/306/5696/666.abstract},
  journal = {Science}
}

@article{PhysRevB.74.155426,
  title = {Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps},
  author = {Huertas-Hernando, Daniel and Guinea, F. and Brataas, Arne},
  journal = {Phys. Rev. B},
  volume = {74},
  issue = {15},
  pages = {155426},
  numpages = {15},
  year = {2006},
  month = oct,
  publisher = {American Physical Society},
  doi = {10.1103/PhysRevB.74.155426},
  url = {http://link.aps.org/doi/10.1103/PhysRevB.74.155426}
}

@article{Trauzettel2007,
  author = {Trauzettel, Bjorn and Bulaev, Denis V. and Loss, Daniel and Burkard, Guido},
  title = {Spin qubits in graphene quantum dots},
  journal = {Nat Phys},
  year = {2007},
  month = mar,
  volume = {3},
  number = {3},
  pages = {192--196},
  issn = {1745-2473},
  doi = {10.1038/nphys544},
  url = {http://dx.doi.org/10.1038/nphys544}
}

@article{Tombros2007,
  author = {Tombros, Nikolaos and Jozsa, Csaba and Popinciuc, Mihaita and Jonkman, Harry T. and van Wees, Bart J.},
  title = {Electronic spin transport and spin precession in single graphene layers at room temperature},
  journal = {Nature},
  year = {2007},
  month = aug,
  day = {02},
  publisher = {Nature Publishing Group},
  volume = {448},
  number = {7153},
  pages = {571--574},
  issn = {0028-0836},
  doi = {10.1038/nature06037},
  url = {http://dx.doi.org/10.1038/nature06037}
}

@article{JJAP.46.L605,
  title = {Spin Injection into a Graphene Thin Film at Room Temperature},
  author = {Megumi Ohishi and Masashi Shiraishi and Ryo Nouchi and Takayuki Nozaki and Teruya Shinjo and Yoshishige Suzuki},
  journal = {Japanese Journal of Applied Physics},
  volume = {46},
  number = {25},
  pages = {L605-L607},
  numpages = {3},
  year = {2007},
  url = {http://jjap.jsap.jp/link?JJAP/46/L605/},
  doi = {10.7567/JJAP.46.L605},
  publisher = {The Japan Society of Applied Physics}
}

@article{PhysRevB.80.241403,
  title = {Linear scaling between momentum and spin scattering in graphene},
  author = {Józsa, C. and Maassen, T. and Popinciuc, M. and Zomer, P. J. and Veligura, A. and Jonkman, H. T. and van Wees, B. J.},
  journal = {Phys. Rev. B},
  volume = {80},
  issue = {24},
  pages = {241403},
  numpages = {4},
  year = {2009},
  month = dec,
  publisher = {American Physical Society},
  doi = {10.1103/PhysRevB.80.241403},
  url = {http://link.aps.org/doi/10.1103/PhysRevB.80.241403}
  }

@article{PhysRevLett.101.046601,
  title = {Anisotropic Spin Relaxation in Graphene},
  author = {Tombros, N. and Tanabe, S. and Veligura, A. and Jozsa, C. and Popinciuc, M. and Jonkman, H. T. and van Wees, B. J.},
  journal = {Phys. Rev. Lett.},
  volume = {101},
  issue = {4},
  pages = {046601},
  numpages = {4},
  year = {2008},
  month = jul,
  publisher = {American Physical Society},
  doi = {10.1103/PhysRevLett.101.046601},
  url = {http://link.aps.org/doi/10.1103/PhysRevLett.101.046601}
}

@article{PhysRev.96.266,
  title = {Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some Semiconductors},
  author = {Elliott, R. J.},
  journal = {Phys. Rev.},
  volume = {96},
  issue = {2},
  pages = {266--279},
  numpages = {0},
  year = {1954},
  month = oct,
  publisher = {American Physical Society},
  doi = {10.1103/PhysRev.96.266},
  url = {http://link.aps.org/doi/10.1103/PhysRev.96.266}
}

@article{PhysRevLett.107.047207,
  title = {Spin Relaxation in Single-Layer and Bilayer Graphene},
  author = {Han, Wei and Kawakami, R. K.},
  journal = {Phys. Rev. Lett.},
  volume = {107},
  issue = {4},
  pages = {047207},
  numpages = {4},
  year = {2011},
  month = jul,
  publisher = {American Physical Society},
  doi = {10.1103/PhysRevLett.107.047207},
  url = {http://link.aps.org/doi/10.1103/PhysRevLett.107.047207}
}

@article{PhysRevLett.104.187201,
  title = {Manipulation of Spin Transport in Graphene by Surface Chemical Doping},
  author = {Pi, K. and Han, Wei and McCreary, K. M. and Swartz, A. G. and Li, Yan and Kawakami, R. K.},
  journal = {Phys. Rev. Lett.},
  volume = {104},
  issue = {18},
  pages = {187201},
  numpages = {4},
  year = {2010},
  month = may,
  publisher = {American Physical Society},
  doi = {10.1103/PhysRevLett.104.187201},
  url = {http://link.aps.org/doi/10.1103/PhysRevLett.104.187201}
}

@article{Han2012,
  author = {Wei Han and Jen-Ru Chen and Deqi Wang and Kathleen M. McCreary and Hua Wen and Adrian G. Swartz and Jing Shi and Roland K. Kawakami},
  doi = {10.1021/nl301567n},
  journal = {Nano Letters},
  number = {7},
  pages = {3443–3447},
  title = {{Spin Relaxation in Single-Layer Graphene with Tunable Mobility}},
  url = {http://pubs.acs.org/doi/abs/10.1021/nl301567n},
  volume = {12},
  year = {2012}
}

@article{1704408,
  author = {Hill, E.W. and Geim, A.K. and Novoselov, K. and Schedin, F. and Blake, P.},
  journal = {Magnetics, IEEE Transactions on},
  title = {Graphene Spin Valve Devices},
  year = {2006},
  month = oct,
  volume = {42},
  number = {10},
  pages = {2694-2696},
  keywords = {ballistic transport;enhanced magnetoresistance;soft magnetic materials;spin polarised transport;spin valves;antiparallel state;ballistic electron transport;field-effect electrode;graphene films;graphene spin valve devices;graphite layer;magnetoresistive devices;polarized spins;soft magnetic films;spin electronic devices;Atomic layer deposition;Electrodes;Electrons;Magnetic switching;Polarization;Soft magnetic materials;Spin valves;Switches;Temperature;Two dimensional displays;Magnetoresistive devices;soft magnetic films;thin films},
  doi = {10.1109/TMAG.2006.878852},
  ISSN = {0018-9464}
}

@article{Cho2007,
  author = {Cho, Sungjae and Chen, Yung-Fu and Fuhrer, Michael S.},
  title = {Gate-tunable graphene spin valve},
  journal = {Applied Physics Letters},
  year = {2007},
  volume = {91},
  number = {12},
  eid = 123105,
  url = {http://scitation.aip.org/content/aip/journal/apl/91/12/10.1063/1.2784934},
  doi = {10.1063/1.2784934}
}

@proceeding{Swartz2013,
  author = {Swartz, Adrian G. and McCreary, Kathleen M. and Han, Wei and Wen, Hua and Kawakami, Roland K.},
  title = {A systematic approach to interpreting Hanle spin precession data in non-local spin valves},
  journal = {Proc. SPIE},
  volume = {8813},
  pages = {881328},
  abstract = {Graphene's two dimensional nature and high surface sensitivity have led to fascinating predictions regarding induced spin-based phenomena through careful control of adsorbates on the graphene surface, including the extrinsic spin Hall effect, band gap opening, and induced magnetism. By taking advantage of atomic scale control provided by MBE, we have investigated submonolayer deposition of adsorbates and their interactions with graphene. Spin transport measurements performed in-situ during systematic introduction of atomic hydrogen demonstrated that hydrogen adsorbed on graphene forms magnetic moments that couple via exchange to the injected spin current. The effects of induced magnetic moments are evident in the non-local magnetoresistance and Hanle spin precession. Exchange coupling between the injected spin current and the induced moments impact the Hanle curves through an effective exchange field leading to new interpretations of Hanle spin precession data and analysis. Here we present a simple procedure in which Hanle curves can be reliably interpreted.},
  year = {2013},
  doi = {10.1117/12.2022782},
  url = {http://dx.doi.org/10.1117/12.2022782}
}

@unpublished{Sosenko2014Talk,
  title= {Effect of contacts on spin lifetime measurements in Graphene},
  author = {Evan Sosenko and Vivek Aji},
  year = {2014},
  month = mar,
  note = {APS March Meeting 2014},
  volume = {59},
  number = {1},
  abstract = {Current spintronic devices favor Graphene's high carrier mobility, however spin precession measurements using the Hanle effect in nonlocal spin valve devices have yielded spin lifetimes between 100 ps and 1 ns. These are orders of magnitude smaller than what is observed in ESR measurements or expected theoretically. In this talk, I revisit the issue of contact induced losses, and establish the extent to which it accounts for this discrepancy. We use the standard approach of solving the Block equations augmented by boundary conditions characterizing the device.},
  url = {http://io.evansosenko.com/deck-spin-lifetime/}
}

@article{1404.3211v1,
  abstract = {Injection, transmission, and detection of spins in a conducting channel are the basic ingredients of spintronic devices. Long spin lifetimes during transit are an important ingredient in realizing this technology. An attractive platform for this purpose is graphene, which has high mobilities and low spin-orbit coupling. Unfortunately, measured spin lifetimes are orders of magnitude smaller than theoretically expected. A source of spin loss is the resistance mismatch between the ferromagnetic electrodes and graphene. While this has been studied numerically, here we provide a closed form expression for Hanle spin precession which is the standard method of measuring spin lifetimes. This allows for a detailed characterization of the nonlocal spin valve device.},
  archiveprefix = {arXiv},
  author = {Evan Sosenko and Huazhou Wei and Vivek Aji},
  comment = {published = 2014-04-11T20:00:13Z, updated = 2014-04-11T20:00:13Z, 9 pages, 4 figures, submitted to Physical Review B},
  eprint = {1404.3211v1},
  month = apr,
  primaryclass = {cond-mat.mes-hall},
  title = {{Effect of contacts on spin lifetime measurements in graphene}},
  url = {https://arxiv.org/abs/1404.3211v1},
  x-fetchedfrom = {arXiv.org},
  year = {2014}
}

@article{1404.6276v1,
  abstract = {The precession of electron spins in a perpendicular magnetic field, the so
  called Hanle effect, provides an unique insight into spin properties of a
  non-magnetic material. In practice, the spin signal is fitted to the analytic
  solution of the spin Bloch equation, which accounts for diffusion, relaxation
  and precession effects on spin. The analytic formula, however, is derived for
  an infinite length of the 1D spin channel. This is usually not satisfied in the
  real devices. The finite size of the channel length $l_{\text{dev}}$ leads to
  confinement of spins and increase of spin accumulation. Moreover, reflection of
  spins from the channel ends leads to spin interference, altering the
  characteristic precession lineshape. In this work we study the influence of
  finite $l_{\text{dev}}$ on the Hanle lineshape and show when it can lead to a
  two-fold discrepancy in the extracted spin coefficients. We propose the
  extension of the Hanle analytic formula to include the geometrical aspects of
  the real device and get an excellent agreement with a finite-element model of
  spin precession, where this geometry is explicitly set. We also demonstrate
  that in the limit of a channel length shorter than the spin relaxation length
  $\lambda_{s}$, the spin diffusion is negligible and a 0D spin transport
  description, with Lorentzian precession dependence applies. We provide a
  universal criterion for which transport description, 0D or 1D, to apply
  depending on the ratio $l_{\text{dev}}/\lambda_{s}$ and the corresponding
  accuracy of such a choice.},
  archiveprefix = {arXiv},
  author = {M. Wojtaszek and I. J. Vera-Marun and B. J. van Wees},
  comment = {published = 2014-04-24T21:37:35Z, updated = 2014-04-24T21:37:35Z, 6 pages, 4 figures},
  eprint = {1404.6276v1},
  month = apr,
  primaryclass = {cond-mat.mes-hall},
  title = {{Transition between 1D and 0D spin transport studied by Hanle precession}},
  url = {https://arxiv.org/abs/1404.6276v1; https://arxiv.org/pdf/1404.6276v1},
  x-fetchedfrom = {arXiv.org},
  year = {2014}
}

@article{PhysRevB.89.245436,
  title = {Effect of contacts on spin lifetime measurements in graphene},
  author = {Sosenko, Evan and Wei, Huazhou and Aji, Vivek},
  journal = {Phys. Rev. B},
  volume = {89},
  issue = {24},
  pages = {245436},
  numpages = {8},
  year = {2014},
  month = jun,
  publisher = {American Physical Society},
  doi = {10.1103/PhysRevB.89.245436},
  url = {http://link.aps.org/doi/10.1103/PhysRevB.89.245436}
}

@article{PhysRevB.39.4828,
  author = {Binasch, G. and Gr\"unberg, P. and Saurenbach, F. and Zinn, W.},
  title = {{Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange}},
  journal = {Phys. Rev. B},
  volume = {39},
  issue = {7},
  pages = {4828--4830},
  numpages = {0},
  year = {1989},
  month = mar,
  publisher = {American Physical Society},
  doi = {10.1103/PhysRevB.39.4828},
  url = {http://link.aps.org/doi/10.1103/PhysRevB.39.4828}
}